RN2909,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
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Experience precision engineering with Toshiba Semiconductor and Storage's RN2909,LXHF(CT Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Toshiba Semiconductor and Storage provides comprehensive technical resources for RN2909,LXHF(CT integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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