RN4908,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR10KOHM Q1BER4
$0.05
Available to order
Reference Price (USD)
1+
$0.04876
500+
$0.0482724
1000+
$0.0477848
1500+
$0.0472972
2000+
$0.0468096
2500+
$0.046322
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents the RN4908,LF(CT series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With Toshiba Semiconductor and Storage's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your RN4908,LF(CT inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Toshiba Semiconductor and Storage