RND030N20TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 200V 3A CPT3
$0.81
Available to order
Reference Price (USD)
2,500+
$0.28565
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RND030N20TL by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RND030N20TL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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