RSH065N06TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 6.5A 8SOP
$1.47
Available to order
Reference Price (USD)
2,500+
$0.49378
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with RSH065N06TB1, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RSH065N06TB1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Toshiba Semiconductor and Storage
TK20E60W,S1VX
Alpha & Omega Semiconductor Inc.
AOW7S65
Diodes Incorporated
DMN2005K-7
Nexperia USA Inc.
PMZ320UPEYL
Fairchild Semiconductor
FQA6N70
onsemi
FDC604P
Vishay Siliconix
SQJ469EP-T1_GE3
Renesas Electronics America Inc
UPA2737GR-E1-AX
Infineon Technologies
AUIRLL024NTR
onsemi