RSQ015N06HZGTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 1.5A TSMT6
$0.69
Available to order
Reference Price (USD)
1+
$0.69000
500+
$0.6831
1000+
$0.6762
1500+
$0.6693
2000+
$0.6624
2500+
$0.6555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with RSQ015N06HZGTR, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RSQ015N06HZGTR provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
SFP9530
Toshiba Semiconductor and Storage
SSM6J414TU,LF
STMicroelectronics
STQ2LN60K3-AP
onsemi
NTHL033N65S3HF
IXYS
IXTK82N25P
onsemi
NTLJF3117PT1G
Infineon Technologies
IPP034N08N5AKSA1
Infineon Technologies
IPD100N04S4L02ATMA1
Panjit International Inc.
PJF4NA50A_T0_00001
IXYS