NTLJF3117PT1G
onsemi
onsemi
MOSFET P-CH 20V 2.3A 6WDFN
$0.54
Available to order
Reference Price (USD)
3,000+
$0.21449
6,000+
$0.20065
15,000+
$0.18681
30,000+
$0.17713
Exquisite packaging
Discount
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Discover high-performance NTLJF3117PT1G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NTLJF3117PT1G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 710mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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