RW1A013ZPT2R
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 12V 1.5A 6WEMT
$0.43
Available to order
Reference Price (USD)
8,000+
$0.12059
16,000+
$0.11281
24,000+
$0.10892
Exquisite packaging
Discount
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Rohm Semiconductor presents RW1A013ZPT2R, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RW1A013ZPT2R delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: 6-SMD, Flat Leads
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