SCT3022KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
$138.93
Available to order
Reference Price (USD)
1+
$110.22000
10+
$104.53400
25+
$101.68960
100+
$99.55620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SCT3022KLHRC11 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SCT3022KLHRC11 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SQJ850EP-T2_GE3
Vishay Siliconix
SI1442DH-T1-GE3
Infineon Technologies
IPD90P03P404ATMA2
Infineon Technologies
IPS65R650CEAKMA1
onsemi
SCH1345-TL-H
onsemi
NVMFS5C442NWFAFT1G
Vishay Siliconix
SIE810DF-T1-GE3
Micro Commercial Co
SI3401A-TP
Vishay Siliconix
SQD25N06-22L_T4GE3
Vishay Siliconix