SCT3120ALHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 21A TO247N
$10.83
Available to order
Reference Price (USD)
1+
$11.95000
10+
$10.98100
25+
$10.52600
100+
$9.27440
450+
$8.81920
900+
$8.25021
Exquisite packaging
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Upgrade your electronic designs with SCT3120ALHRC11 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SCT3120ALHRC11 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 103W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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