SCTWA20N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$17.79
Available to order
Reference Price (USD)
600+
$9.26550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SCTWA20N120 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SCTWA20N120 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK5A50D(STA4,Q,M)
Nexperia USA Inc.
PMV30XPEAR
Toshiba Semiconductor and Storage
TK290P60Y,RQ
Panjit International Inc.
PJD100N04_L2_00001
onsemi
NDT3055L
Fairchild Semiconductor
SFW9Z24TM
Diodes Incorporated
DMT10H072LFV-13
IXYS
IXFX120N25P
Rohm Semiconductor
SCT3105KLGC11
IXYS