SI3442BDV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 3A 6TSOP
$0.62
Available to order
Reference Price (USD)
3,000+
$0.22540
6,000+
$0.21086
15,000+
$0.19632
30,000+
$0.18614
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI3442BDV-T1-E3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI3442BDV-T1-E3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
BSS159NH6327XTSA2
Rectron USA
RM2309E
Infineon Technologies
SPD50N03S2L
Infineon Technologies
IRFS3107TRL7PP
Alpha & Omega Semiconductor Inc.
AOB409L
Toshiba Semiconductor and Storage
TK39N60W5,S1VF
Infineon Technologies
IPU80R2K8CEAKMA1
onsemi
FDME820NZT
Microchip Technology
VN2410L-G
Fairchild Semiconductor