SI3499DV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 5.3A 6TSOP
$1.05
Available to order
Reference Price (USD)
3,000+
$0.47560
6,000+
$0.45327
15,000+
$0.43732
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI3499DV-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI3499DV-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 750mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
FDS9431A
onsemi
FQD13N06LTM
Taiwan Semiconductor Corporation
TSM090N03ECP ROG
Infineon Technologies
IRFB5615PBF
Infineon Technologies
AUIRFS3006-7TRL
Diodes Incorporated
DMT6030LFDF-7
onsemi
NVMFS5A140PLZWFT1G
Nexperia USA Inc.
PSMN1R9-40YSDX
Infineon Technologies
IPI80N04S3-03
NXP USA Inc.