SI4190ADY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 18.4A 8SO
$1.95
Available to order
Reference Price (USD)
2,500+
$0.95005
5,000+
$0.91708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SI4190ADY-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI4190ADY-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SQ1431EH-T1_GE3
Infineon Technologies
AUIRFR2905Z
NXP USA Inc.
BUK652R1-30C,127
Alpha & Omega Semiconductor Inc.
AOB11S65L
Infineon Technologies
IRF6641TRPBF
Texas Instruments
CSD23280F3
NTE Electronics, Inc
NTE2381
Diodes Incorporated
DMT35M7LFV-7
Nexperia USA Inc.
PSMN4R2-30MLDX
Nexperia USA Inc.