SQ1431EH-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 3A SC70-6
$0.63
Available to order
Reference Price (USD)
3,000+
$0.19494
6,000+
$0.18306
15,000+
$0.17118
30,000+
$0.16286
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQ1431EH-T1_GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQ1431EH-T1_GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Infineon Technologies
AUIRFR2905Z
NXP USA Inc.
BUK652R1-30C,127
Alpha & Omega Semiconductor Inc.
AOB11S65L
Infineon Technologies
IRF6641TRPBF
Texas Instruments
CSD23280F3
NTE Electronics, Inc
NTE2381
Diodes Incorporated
DMT35M7LFV-7
Nexperia USA Inc.
PSMN4R2-30MLDX
Nexperia USA Inc.
BUK7M3R3-40HX
Rohm Semiconductor