SI7145DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 60A PPAK SO-8
$2.40
Available to order
Reference Price (USD)
3,000+
$1.17290
6,000+
$1.13220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI7145DP-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI7145DP-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15660 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Toshiba Semiconductor and Storage
TK1R4F04PB,LXGQ
onsemi
FDC637AN
Fairchild Semiconductor
NDP7050L
Toshiba Semiconductor and Storage
TPN2R304PL,L1Q
Infineon Technologies
IRLR3105TRPBF
Texas Instruments
CSD18542KTT
STMicroelectronics
STF21NM60ND
Vishay Siliconix
IRLI530GPBF
Diodes Incorporated
DMN2053UW-7
Vishay Siliconix