SI7489DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 100V 28A PPAK SO-8
$2.77
Available to order
Reference Price (USD)
3,000+
$1.35518
6,000+
$1.30815
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI7489DP-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI7489DP-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FDP030N06B-F102
Diodes Incorporated
DMG4468LK3-13
onsemi
SFT1341-W
onsemi
SCH1434-TL-H
Vishay Siliconix
SI7322DN-T1-E3
onsemi
NTMS5838NLR2G
IXYS
IXFP3N120
Diodes Incorporated
DMN4800LSSQ-13
onsemi
FCH077N65F-F085
Infineon Technologies