SI8481DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 9.7A 4MICRO FOOT
$0.15
Available to order
Reference Price (USD)
3,000+
$0.16852
6,000+
$0.15884
15,000+
$0.14916
30,000+
$0.13754
75,000+
$0.13270
Exquisite packaging
Discount
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Optimize your electronic systems with SI8481DB-T1-E1, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI8481DB-T1-E1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
- Package / Case: 4-UFBGA
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