SIA485DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 150V 1.6A PPAK SC70
$0.61
Available to order
Reference Price (USD)
3,000+
$0.22671
6,000+
$0.21289
15,000+
$0.19908
30,000+
$0.18940
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIA485DJ-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIA485DJ-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 15.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJB200G06B-F2-0000HF
IXYS
IXTA10P50P
Texas Instruments
TPS1101PWR
Fairchild Semiconductor
FQA13N50CF
Infineon Technologies
IPN60R600P7SATMA1
Infineon Technologies
IPP034N03LG
onsemi
NVD5C460NT4G
Fairchild Semiconductor
FDG314P
Toshiba Semiconductor and Storage
TK6P53D(T6RSS-Q)
Infineon Technologies