SIDR626EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 60 V (D-S) 175C MOSFET
$3.49
Available to order
Reference Price (USD)
1+
$3.49000
500+
$3.4551
1000+
$3.4202
1500+
$3.3853
2000+
$3.3504
2500+
$3.3155
Exquisite packaging
Discount
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Boost your electronic applications with SIDR626EP-T1-RE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIDR626EP-T1-RE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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