SIE802DF-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 60A 10POLARPAK
$2.19
Available to order
Reference Price (USD)
3,000+
$1.94579
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SIE802DF-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SIE802DF-T1-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 23.6A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK® (L)
- Package / Case: 10-PolarPAK® (L)
Related Products
Nexperia USA Inc.
PHP191NQ06LT,127
Vishay Siliconix
SI7145DP-T1-GE3
Toshiba Semiconductor and Storage
TK1R4F04PB,LXGQ
onsemi
FDC637AN
Fairchild Semiconductor
NDP7050L
Toshiba Semiconductor and Storage
TPN2R304PL,L1Q
Infineon Technologies
IRLR3105TRPBF
Texas Instruments
CSD18542KTT
STMicroelectronics
STF21NM60ND
Vishay Siliconix