SIHD2N80E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 2.8A DPAK
$1.49
Available to order
Reference Price (USD)
1+
$1.49000
500+
$1.4751
1000+
$1.4602
1500+
$1.4453
2000+
$1.4304
2500+
$1.4155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIHD2N80E-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHD2N80E-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
NTE Electronics, Inc
NTE2984
Microchip Technology
MSC750SMA170B
Infineon Technologies
ISP25DP06NMXTSA1
Alpha & Omega Semiconductor Inc.
AONR32314
Toshiba Semiconductor and Storage
SSM3J358R,LF
Vishay Siliconix
IRF610PBF-BE3
Diotec Semiconductor
DI045N03PT-AQ
Infineon Technologies
IMW120R045M1XKSA1
onsemi
SCH1435-TL-W
Infineon Technologies