SIHFL110TR-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
$0.23
Available to order
Reference Price (USD)
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$0.23358
500+
$0.2312442
1000+
$0.2289084
1500+
$0.2265726
2000+
$0.2242368
2500+
$0.221901
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIHFL110TR-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIHFL110TR-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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