SIHG25N50E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 26A TO247AC
$4.04
Available to order
Reference Price (USD)
1+
$4.27000
10+
$3.81200
100+
$3.12540
500+
$2.53084
1,000+
$2.13444
2,500+
$2.02772
5,000+
$1.95149
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIHG25N50E-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIHG25N50E-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Fairchild Semiconductor
FCPF380N65FL1
onsemi
FCP220N80
Infineon Technologies
IQE030N06NM5ATMA1
STMicroelectronics
STL210N4LF7AG
onsemi
FQD5P10TM
Fairchild Semiconductor
FQP4N90
Nexperia USA Inc.
PMH400UNEH
Infineon Technologies
IPB60R105CFD7ATMA1
STMicroelectronics
STD80N4F6
Alpha & Omega Semiconductor Inc.