SIR438DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 60A PPAK SO-8
$2.04
Available to order
Reference Price (USD)
3,000+
$0.99855
6,000+
$0.96390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIR438DP-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIR438DP-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
IXYS
IXTK110N20L2
Microchip Technology
VN0606L-G-P003
IXYS
IXFK210N30X3
Infineon Technologies
BSC082N10LSGATMA1
Panjit International Inc.
PJMF990N65EC_T0_00001
Fairchild Semiconductor
HUFA75343G3
Panjit International Inc.
PJA3463_R1_00001
onsemi
NVH4L015N065SC1
onsemi
FDPF5N60NZ
Vishay Siliconix