SIR770DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 8A PPAK SO-8
$1.23
Available to order
Reference Price (USD)
3,000+
$0.55760
6,000+
$0.53142
15,000+
$0.51272
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIR770DP-T1-GE3 from Vishay Siliconix is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SIR770DP-T1-GE3 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Vishay Siliconix s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Power - Max: 17.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
onsemi
NTHD3102CT1G
Diodes Incorporated
ZXMC3A16DN8TA
Vishay Siliconix
SI4946BEY-T1-GE3
onsemi
EMH2308-TL-E
Vishay Siliconix
SQJB80EP-T1_BE3
Nexperia USA Inc.
BUK9K13-60EX
Infineon Technologies
IRF7389PBF
Infineon Technologies
BSC0911NDATMA1
Renesas Electronics America Inc
BB305CEW-TL-E
Harris Corporation