SISA88DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 16.2A/40.5A PPAK
$0.55
Available to order
Reference Price (USD)
3,000+
$0.20758
6,000+
$0.19493
15,000+
$0.18228
30,000+
$0.17342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SISA88DN-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SISA88DN-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Infineon Technologies
IRLR8743TRPBF
Vishay Siliconix
IRF630PBF-BE3
Renesas Electronics America Inc
UPA2521T1H-T1-AT
STMicroelectronics
STF13N80K5
Infineon Technologies
IRLMS6702TRPBF
PN Junction Semiconductor
P3M06120K3
onsemi
FDD6N25TM
Wolfspeed, Inc.
C2M1000170J-TR
Fairchild Semiconductor
IRFW644BTM
Panjit International Inc.