SISF06DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
COMMON-DRAIN DUAL N-CH 30V (S1-S
$1.24
Available to order
Reference Price (USD)
1+
$1.24000
500+
$1.2276
1000+
$1.2152
1500+
$1.2028
2000+
$1.1904
2500+
$1.178
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SISF06DN-T1-GE3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SISF06DN-T1-GE3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
- Power - Max: 5.2W (Ta), 69.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8SCD
- Supplier Device Package: PowerPAK® 1212-8SCD
Related Products
onsemi
FDS8984-F40
Vishay Siliconix
SIZF918DT-T1-GE3
Microchip Technology
MSCSM170TLM23C3AG
Microchip Technology
APTM20HM20FTG
Infineon Technologies
FS03MR12A6MA1BBPSA1
Microchip Technology
MSCSM170HM12CAG
Sanyo
2SJ662-DL-E
Harris Corporation
IRF442119U
onsemi
MCH5802-TL-E-ON
Microchip Technology