SISS23DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 50A PPAK 1212-8S
$0.90
Available to order
Reference Price (USD)
3,000+
$0.37070
6,000+
$0.34664
15,000+
$0.33461
30,000+
$0.32805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SISS23DN-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SISS23DN-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
Taiwan Semiconductor Corporation
TSM056NH04LCR RLG
Vishay Siliconix
SI7454DP-T1-E3
STMicroelectronics
STP18N65M2
Vishay Siliconix
SIRA84BDP-T1-GE3
Infineon Technologies
IPB80R290C3AATMA2
Vishay Siliconix
IRFR210TRPBF-BE3
Vishay Siliconix
IRF9Z34PBF
STMicroelectronics
STP270N8F7
Diodes Incorporated
ZXMN2069FTA
Rohm Semiconductor