SIZF640DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 40 V (D-S) MOSFET
$2.94
Available to order
Reference Price (USD)
1+
$2.94000
500+
$2.9106
1000+
$2.8812
1500+
$2.8518
2000+
$2.8224
2500+
$2.793
Exquisite packaging
Discount
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Discover high-performance SIZF640DT-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SIZF640DT-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc)
- Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V
- Power - Max: 4.2W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerDFN
- Supplier Device Package: PowerPAIR® 6x5FS
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