SKB02N60E3266ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 6A 30W TO263-3
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
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The SKB02N60E3266ATMA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
- Power - Max: 30 W
- Switching Energy: 64µJ
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 20ns/259ns
- Test Condition: 400V, 2A, 118Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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