SPW47N60C3FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
$20.15
Available to order
Reference Price (USD)
1+
$16.38000
10+
$14.99800
240+
$12.92708
720+
$11.20140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents SPW47N60C3FKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SPW47N60C3FKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 415W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMG3415UFY4Q-7
onsemi
MMBF1374T1
Vishay Siliconix
SI8823EDB-T2-E1
Vishay Siliconix
IRF510PBF
Infineon Technologies
IRF1407PBF
Vishay Siliconix
SI3483CDV-T1-GE3
Panjit International Inc.
PJD16P04_L2_00001
Rohm Semiconductor
RD3S100AAFRATL
Fairchild Semiconductor
SFP9620
Renesas Electronics America Inc