SQJ868EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 58A PPAK SO-8
$1.03
Available to order
Reference Price (USD)
3,000+
$0.39663
6,000+
$0.37089
15,000+
$0.35802
30,000+
$0.35100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SQJ868EP-T1_GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SQJ868EP-T1_GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
BSC040N08NS5ATMA1
onsemi
FDD6637
Transphorm
TPH3206PS
Infineon Technologies
BSC0403NSATMA1
Infineon Technologies
IPS075N03LGAKMA1
GeneSiC Semiconductor
G3R20MT12N
Diodes Incorporated
DMN2056U-13
Alpha & Omega Semiconductor Inc.
AOL1404G
Nexperia USA Inc.
BUK6D81-80EX
Infineon Technologies