SQS142ENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
$0.99
Available to order
Reference Price (USD)
1+
$0.99000
500+
$0.9801
1000+
$0.9702
1500+
$0.9603
2000+
$0.9504
2500+
$0.9405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SQS142ENW-T1_GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SQS142ENW-T1_GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerPAK® 1212-8SLW
- Package / Case: PowerPAK® 1212-8SLW
Related Products
Vishay Siliconix
IRFBF20LPBF
Infineon Technologies
IRLR3705ZTRPBF
IXYS
IXFH18N60X
onsemi
NVTYS006N06CLTWG
Nexperia USA Inc.
PSMN034-100BS,118
Infineon Technologies
IPD90N06S405ATMA2
Infineon Technologies
IPB029N06N3GATMA1
onsemi
FDB045AN08A0-F085
onsemi
FQA13N80-F109
Taiwan Semiconductor Corporation