SSM3J66MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 800MA VESM
$0.07
Available to order
Reference Price (USD)
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$0.06732
500+
$0.0666468
1000+
$0.0659736
1500+
$0.0653004
2000+
$0.0646272
2500+
$0.063954
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SSM3J66MFV,L3F by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SSM3J66MFV,L3F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Toshiba Semiconductor and Storage