SSM6L09FUTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 0.4A/0.2A US6
$0.51
Available to order
Reference Price (USD)
3,000+
$0.10260
6,000+
$0.09690
15,000+
$0.08835
30,000+
$0.08265
75,000+
$0.07980
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Toshiba Semiconductor and Storage s SSM6L09FUTE85LF, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for SSM6L09FUTE85LF.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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