STD11N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 7A DPAK
$1.88
Available to order
Reference Price (USD)
2,500+
$1.11053
5,000+
$1.07406
Exquisite packaging
Discount
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STMicroelectronics presents STD11N65M2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STD11N65M2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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