STF6N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 4A TO220FP
$1.77
Available to order
Reference Price (USD)
1+
$1.83000
50+
$1.49360
100+
$1.35380
500+
$1.07442
1,000+
$0.90678
2,500+
$0.85090
5,000+
$0.82296
Exquisite packaging
Discount
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Experience the power of STF6N65M2, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STF6N65M2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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