STGB30H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 30
$2.69
Available to order
Reference Price (USD)
1+
$2.69000
500+
$2.6631
1000+
$2.6362
1500+
$2.6093
2000+
$2.5824
2500+
$2.5555
Exquisite packaging
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Choose STGB30H65DFB2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGB30H65DFB2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 167 W
- Switching Energy: 270µJ (on), 310µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 18.4ns/71ns
- Test Condition: 400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): 115 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: D2PAK-3
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