STGP5H60DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
$1.63
Available to order
Reference Price (USD)
1+
$1.23000
50+
$0.98560
100+
$0.86240
500+
$0.66880
1,000+
$0.52800
2,500+
$0.49280
5,000+
$0.46816
Exquisite packaging
Discount
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Discover high-performance STGP5H60DF Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGP5H60DF ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
- Power - Max: 88 W
- Switching Energy: 56µJ (on), 78.5µJ (off)
- Input Type: Standard
- Gate Charge: 43 nC
- Td (on/off) @ 25°C: 30ns/140ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 134.5 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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