STGWA25H120F2
STMicroelectronics
STMicroelectronics
IGBT HB 1200V 25A HS TO247-3
$6.32
Available to order
Reference Price (USD)
1+
$8.34000
30+
$7.26167
120+
$6.38292
510+
$5.63425
1,020+
$4.98325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose STGWA25H120F2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGWA25H120F2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 600µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 29ns/130ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
onsemi
FGH40T65SPD-F155
Rohm Semiconductor
RGW80TS65DGC11
Alpha & Omega Semiconductor Inc.
AOTF20B65M2
Infineon Technologies
IKQ75N120CT2XKSA1
Infineon Technologies
IKZ75N65EL5XKSA1
IXYS
IXYH120N65A5
IXYS
IXGX120N60A3
STMicroelectronics
STGW60H65DFB
Infineon Technologies
IGW50N60TFKSA1
IXYS