STGW50H65DFB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 5
$5.78
Available to order
Reference Price (USD)
1+
$5.78000
500+
$5.7222
1000+
$5.6644
1500+
$5.6066
2000+
$5.5488
2500+
$5.491
Exquisite packaging
Discount
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Optimize power control with STGW50H65DFB2-4 Single IGBTs from STMicroelectronics, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. STMicroelectronics ensures STGW50H65DFB2-4 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 86 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 272 W
- Switching Energy: 629µJ (on), 478µJ (off)
- Input Type: Standard
- Gate Charge: 151 nC
- Td (on/off) @ 25°C: 18ns/128ns
- Test Condition: 400V, 50A, 12Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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