STGWT30V60DF
STMicroelectronics
STMicroelectronics
IGBT 600V 60A 258W TO3P-3
$3.54
Available to order
Reference Price (USD)
1+
$3.73000
30+
$3.17033
120+
$2.74775
510+
$2.33910
1,020+
$1.97274
2,520+
$1.87880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose STGWT30V60DF Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGWT30V60DF a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 258 W
- Switching Energy: 383µJ (on), 233µJ (off)
- Input Type: Standard
- Gate Charge: 163 nC
- Td (on/off) @ 25°C: 45ns/189ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
onsemi
NGB8207BNT4G
Infineon Technologies
IKW30N60H3FKSA1
IXYS
IXYH20N120C3
Microchip Technology
APT50GN120B2G
STMicroelectronics
STGW40NC60W
Infineon Technologies
IKD06N60R
IXYS
IXGH6N170
Sanken
FGM603
Fairchild Semiconductor
SGL40N150DTU
onsemi