STGWT80H65FB
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
$6.33
Available to order
Reference Price (USD)
1+
$11.47000
30+
$10.10100
120+
$8.89983
510+
$7.91700
1,020+
$7.28000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGWT80H65FB Single IGBT from STMicroelectronics delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. STMicroelectronics's commitment to innovation ensures STGWT80H65FB meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
STMicroelectronics
STGP30H60DF
STMicroelectronics
STGB4M65DF2
Fairchild Semiconductor
FGA25S125P-SN00337
Infineon Technologies
IGW03N120H2FKSA1
Infineon Technologies
AIGW50N65H5XKSA1
Infineon Technologies
IGW50N65F5FKSA1
Rohm Semiconductor
RGC80TSX8RGC11
Infineon Technologies
AUIRGR4045D
STMicroelectronics
STGFW20H65FB
Microchip Technology