STP33N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 24A TO220
$5.46
Available to order
Reference Price (USD)
1+
$4.60000
50+
$3.74440
100+
$3.43530
500+
$2.83250
1,000+
$2.43065
2,500+
$2.32247
5,000+
$2.24519
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STP33N60DM2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STP33N60DM2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
FCPF190N65S3R0L
Infineon Technologies
IPP65R600C6XKSA1
Rohm Semiconductor
SCT2H12NZGC11
Infineon Technologies
IPW60R070CFD7XKSA1
Panjit International Inc.
PJQ4414P_R2_00001
Nexperia USA Inc.
PXN012-60QLJ
Toshiba Semiconductor and Storage
SSM3K339R,LF
Infineon Technologies
SP000629364
Alpha & Omega Semiconductor Inc.
AOB11S60L
Rohm Semiconductor