STU7N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 5A IPAK
$1.69
Available to order
Reference Price (USD)
1+
$1.64000
75+
$1.32440
150+
$1.16840
525+
$0.92341
1,050+
$0.74520
2,550+
$0.70065
5,025+
$0.66946
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STU7N60M2 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STU7N60M2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Vishay Siliconix
IRFR014TRLPBF-BE3
Vishay Siliconix
SI4866DY-T1-E3
NXP USA Inc.
BUK751R6-30E,127
Alpha & Omega Semiconductor Inc.
AOTF4N60
PN Junction Semiconductor
P3M06060K4
Infineon Technologies
IPI80N04S4L04AKSA1
onsemi
NTGS3443BT1G
IXYS
IXTX102N65X2
onsemi
NVMFS5C450NAFT1G
Diodes Incorporated