TK10J80E,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 10A TO3P
$2.73
Available to order
Reference Price (USD)
25+
$2.48640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance TK10J80E,S1E from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TK10J80E,S1E delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
Related Products
Fairchild Semiconductor
FQB6N90TM
onsemi
NDS0610
onsemi
FDMC8878
onsemi
NTR4503NT1G
onsemi
SCH1332-TL-H
STMicroelectronics
STW5NK100Z
Taiwan Semiconductor Corporation
TSM35N10CP ROG
Texas Instruments
CSD17559Q5
onsemi
MGSF2N02ELT1G
Infineon Technologies