TPH3212PS
Transphorm
Transphorm
GANFET N-CH 650V 27A TO220AB
$13.31
Available to order
Reference Price (USD)
1+
$13.95000
10+
$12.68000
50+
$11.72900
100+
$10.77800
250+
$9.82700
500+
$9.19300
1,000+
$8.87600
Exquisite packaging
Discount
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TPH3212PS by Transphorm is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TPH3212PS ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 400uA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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