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TK5R1P08QM,RQ

Toshiba Semiconductor and Storage
TK5R1P08QM,RQ Preview
Toshiba Semiconductor and Storage
UMOS10 DPAK 80V 5.1MOHM
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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