TP2510N8-G
Microchip Technology
Microchip Technology
MOSFET P-CH 100V 480MA TO243AA
$1.61
Available to order
Reference Price (USD)
2,000+
$0.88580
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TP2510N8-G by Microchip Technology is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TP2510N8-G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
Related Products
Nexperia USA Inc.
PMZ600UNEYL
Vishay Siliconix
SIHF540S-GE3
Rectron USA
RM60N100DF
Vishay Siliconix
SI8483DB-T2-E1
Rohm Semiconductor
RSR025N05HZGTL
Diotec Semiconductor
DI070P04PQ
Panasonic Electronic Components
MTMF82310BBF
PN Junction Semiconductor
P1H06300D8
Infineon Technologies
IPN95R1K2P7ATMA1
STMicroelectronics