TP65H015G5WS
Transphorm
Transphorm
650 V 95 A GAN FET
$35.14
Available to order
Reference Price (USD)
1+
$35.14000
500+
$34.7886
1000+
$34.4372
1500+
$34.0858
2000+
$33.7344
2500+
$33.383
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TP65H015G5WS, a high-quality Transistors - FETs, MOSFETs - Single from Transphorm. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TP65H015G5WS provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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